Boron - impurity trap in electrochemical nickel systems for the hydrogen atoms

Abstract

The main objective of this work is to study the influence of boron during the processes of hydrogen permeation of electrochemical systems based on nickel. In this regard, the experimental results of the behavior of hydrogen in electrochemical nickel systems in the course of their boron doping are considered. The introduction of the boron concentration in excess of 5 nuclear percent in electrochemical nickel helps to increase the amount of occluded hydrogen. A possible reason for this behavior is the presence of impurity and structural traps for atoms of hydrogen. Boron atoms as impurity traps are considered. Concentration of hydrogen in the electrochemical system is defined as the probability of the formation of defective structures in the metal and is a random variable. The probability density of distribution of defects in the electrochemical system is a function of the parameters of electrolysis. However, the main factor is the current density and chemical composition of electrolyte (presence amorphizator - boron). Amorphous alloys based on aluminum or nickel may be used as drives of hydrogen. Mathematical modelings of the interaction of hydrogen atoms together with the structural traps were performed. The kinetics of capture hydrogen atoms by structural traps was also defined. The physical model of formation of tensile stresses in the vicinity of the boron atoms was proposed additionally. Hydrogen atoms are deployed in places where there are defects of the crystal lattice, forming a connection with nickel and boron. Hydrogen atoms are located near the defects of crystal lattice, thus forming a connection with nickel and boron. Tensile stress occurs in the vicinity of boron atoms. It provides the interaction of boron atoms with hydrogen and the formation of impurity traps for atoms of hydrogen.